六块掩模版的图样
A．MESA
B．TCL
C． ISO isolation
D. MB metal bridge
E．PW
F．SiO2 passivation
8-25次试验一片1.MESA- ICP 6min
parameter
Base
ICP
Cl
Ar
Pressure
value
80
120
30
30
0.60Pa
Fig.1 The picture of wafer etched by ICP in 6 min.
The average thickness of SiO2 Hard Mask: 6671 Å
The MESA average depth after ICP: 12400 Å
Fig. 2 Photograph of remove SiO2 mask. Rough wafer 45 sec., smooth wafer 50 sec..
2.TCL
The thickness of ITO is about 250 nm.
Fig. 3 etched ITO four minutes
3.ISO
Fig. 4 Etched 30 minutes using ICP
Fig. 5 Remove SiO2(1um) after ICP 40 minutes
The graphic pattern of the wafer inclined to one side in this step.
最终芯片外观，然后激光切割。
该技术的难点是小chip之间需要完全刻蚀独立，然后用金电极串联，如何让电极跨越高深度的鸿沟而不出现悬空和断线。